Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE
Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE
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DOI：
10.1016/j.jcrysgro.2015.02.042
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发表时间：
2015-09
影响因子：
1.8
通讯作者：
Shingo Takamatsu;I. Nomura;Tomohiro Shiraishi;K. Kishino
中科院分区：
文献类型：
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作者：
Shingo Takamatsu;I. Nomura;Tomohiro Shiraishi;K. Kishino
