Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission
Selective Area Metal–Organic Vapor Phase Epitaxy of Nitride Semiconductors for Multicolor Emission
复制标题
DOI：
10.1109/jstqe.2009.2015433
复制
发表时间：
2009-07
影响因子：
4.9
通讯作者：
T. Shioda;Y. Tomita;M. Sugiyama;Y. Shimogaki;Y. Nakano
中科院分区：
文献类型：
--
作者：
T. Shioda;Y. Tomita;M. Sugiyama;Y. Shimogaki;Y. Nakano
选择性区域金属有机气相外延 (SA-MOVPE) 允许通过定制掩模宽度来平面内控制发射波长。对于 InGaN/GaN 多量子阱 (MQW)，发光波长的调制是基于 III 族前驱体的气相扩散与其表面掺入之间的平衡来实现的。为了基本了解氮化物半导体的 SA-MOVPE，研究了相对较宽（>10μm）掩模周围的 GaN、InN、AlN 和 InGaN 层的厚度分布。提取了 GaN 和 InN 的有效横向扩散长度 D/ks，即前体的气相质量扩散率与其表面结合速率常数的比率。由于较小的表面结合率，InN 的值要大得多。在800℃左右的InGaN块体层的SA-MOVPE中，铟的掺入率似乎受到镓前驱体的表面通量的限制，导致铟含量没有变化。由于掩模的存在而导致的 InGaN 阱宽度的变化似乎控制着 InGaN/GaN MQW 的发光波长的偏移。因此，基于定量模型设计GaN的厚度分布对于使用SA-MOVPE的固态照明器件的受控面内颜色调制至关重要。
Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of emission wavelength by tailored width of masks. For InGaN/GaN multiple quantum wells (MQWs), modulation of luminescence wavelength was achieved based on a balance between vapor-phase diffusion of group-III precursors and their surface incorporation. For the basic understanding of the SA-MOVPE of nitride semiconductors, thickness profiles of GaN, InN, AlN, and InGaN layers around relatively wide (>10 mum) masks were investigated. The effective lateral diffusion length D/ks, which is the ratio of the vapor-phase mass diffusivity of a precursor to its surface incorporation rate constant, was extracted for GaN and InN. The value was much larger for InN due to smaller surface incorporation rate. In the SA-MOVPE of InGaN bulk layer at around 800degC, indium incorporation rate seems to be limited by the surface flux of a gallium precursor, resulting in no variation in the indium content. Varied width of the InGaN wells by the existence of masks seems to govern the shift in the luminescence wavelength from InGaN/GaN MQWs. Therefore, design of the thickness distribution of GaN based on the quantitative model is essential to the controlled in-plane color modulation of solid-state lighting devices using SA-MOVPE.