Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
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DOI：
10.1039/c7nr00088j
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发表时间：
2017-05
期刊：
影响因子：
6.7
通讯作者：
A. Nourbakhsh;Ahmad Zubair;S. Joglekar;M. Dresselhaus;T. Palacios
中科院分区：
文献类型：
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作者：
A. Nourbakhsh;Ahmad Zubair;S. Joglekar;M. Dresselhaus;T. Palacios
利用铁电材料中的负电容效应获得低于60 mV dec-1的亚阈值摆幅（SS）是降低场效应晶体管（FET）电源电压和功耗的一种新的有效技术。与此同时，二维分层半导体，例如二硫化钼（MoS 2），已被证明是在亚5纳米沟道技术节点中取代硅MOSFET的有前途的候选材料。在本文中，我们证明了NC二硫化钼场效应晶体管通过将铁电铝掺杂的HfO 2（Al：HfO 2），一种技术兼容的材料，在FET栅极叠层。采用原子层沉积法在Si基片上制备了Al：HfO 2薄膜。在具有Ni金属中间层的Al：HfO 2/HfO 2的FE双层堆叠中观察到高达1.25倍的电压放大。在FE双层上构建的NC-MoS 2 FET的最小SS（SSmin）在室温下提高到57 mV dec-1，相比之下，仅具有HfO 2作为栅极电介质的MoS 2 FET的SSmin = 67 mV dec-1。
Obtaining a subthreshold swing (SS) below the thermionic limit of 60 mV dec-1 by exploiting the negative-capacitance (NC) effect in ferroelectric (FE) materials is a novel effective technique to allow the reduction of the supply voltage and power consumption in field effect transistors (FETs). At the same time, two-dimensional layered semiconductors, such as molybdenum disulfide (MoS2), have been shown to be promising candidates to replace silicon MOSFETs in sub-5 nm-channel technology nodes. In this paper, we demonstrate NC MoS2 FETs by incorporating a ferroelectric Al-doped HfO2 (Al : HfO2), a technologically compatible material, in the FET gate stack. Al : HfO2 thin films were deposited on Si wafers by atomic layer deposition. Voltage amplification up to 1.25 times was observed in a FE bilayer stack of Al : HfO2/HfO2 with a Ni metallic intermediate layer. The minimum SS (SSmin) of the NC-MoS2 FET built on the FE bilayer improved to 57 mV dec-1 at room temperature, compared with SSmin = 67 mV dec-1 for the MoS2 FET with only HfO2 as a gate dielectric.