Analytical modeling of the temporal evolution of hot spot temperatures in silicon solar cells

Analytical modeling of the temporal evolution of hot spot temperatures in silicon solar cells
复制标题

DOI:
10.1063/1.5018171
复制
发表时间:
2018-03
影响因子:
3.2
通讯作者:
S. Wasmer;N. Rajsrima;I. Geisemeyer;F. Fertig;J. Greulich;S. Rein
S. Wasmer;N. Rajsrima;I. Geisemeyer;F. Fertig;J. Greulich;S. Rein
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
S. Wasmer;N. Rajsrima;I. Geisemeyer;F. Fertig;J. Greulich;S. Rein

文献摘要

被引文献

相似文献

我们提出了一种方法来预测晶体硅太阳能电池的热点的平衡温度的基础上,他们的时间演变的分析后,打开一个反向偏置。为此,我们推导出一个解析表达式的依赖于时间的热扩散的击穿通道,假设是圆柱形的。我们验证了这一点,通过热成像的热点后,打开反向偏置。该表达式允许用于从短期测量中提取热点功率和半径,以在线太阳能电池表征中的应用为目标。提取的热点功率在长期暗锁定热成像的手中进行验证。使用由数值和分析模拟确定的预期平衡温度的查找表,我们利用所确定的热点性质来预测大约100个工业铝背的平衡温度,表面场太阳能电池,并实现了0.86的高相关系数和平均绝对误差只有3.3 K。我们提出了一种方法来预测热点的平衡温度,晶体硅太阳能电池基于它们在打开反向偏压之后的时间演变的分析。为此,我们推导出一个解析表达式的依赖于时间的热扩散的击穿通道,假设是圆柱形的。我们验证了这一点,通过热成像的热点后,打开反向偏置。该表达式允许用于从短期测量中提取热点功率和半径,以在线太阳能电池表征中的应用为目标。提取的热点功率在长期暗锁定热成像的手中进行验证。使用一个查找表的预期平衡温度确定的数值和分析模拟,我们利用确定的热点属性来预测约100个工业铝背场太阳能电池的平衡温度,并实现了高相关系数为0…
We present an approach to predict the equilibrium temperature of hot spots in crystalline silicon solar cells based on the analysis of their temporal evolution right after turning on a reverse bias. For this end, we derive an analytical expression for the time-dependent heat diffusion of a breakdown channel that is assumed to be cylindrical. We validate this by means of thermography imaging of hot spots right after turning on a reverse bias. The expression allows to be used to extract hot spot powers and radii from short-term measurements, targeting application in inline solar cell characterization. The extracted hot spot powers are validated at the hands of long-term dark lock-in thermography imaging. Using a look-up table of expected equilibrium temperatures determined by numerical and analytical simulations, we utilize the determined hot spot properties to predict the equilibrium temperatures of about 100 industrial aluminum back-surface field solar cells and achieve a high correlation coefficient of 0.86 and a mean absolute error of only 3.3 K.We present an approach to predict the equilibrium temperature of hot spots in crystalline silicon solar cells based on the analysis of their temporal evolution right after turning on a reverse bias. For this end, we derive an analytical expression for the time-dependent heat diffusion of a breakdown channel that is assumed to be cylindrical. We validate this by means of thermography imaging of hot spots right after turning on a reverse bias. The expression allows to be used to extract hot spot powers and radii from short-term measurements, targeting application in inline solar cell characterization. The extracted hot spot powers are validated at the hands of long-term dark lock-in thermography imaging. Using a look-up table of expected equilibrium temperatures determined by numerical and analytical simulations, we utilize the determined hot spot properties to predict the equilibrium temperatures of about 100 industrial aluminum back-surface field solar cells and achieve a high correlation coefficient of 0...