Orientational distributions in smectic liquid crystals showing V-shaped switching investigated by polarized Raman scattering.
Orientational distributions in smectic liquid crystals showing V-shaped switching investigated by polarized Raman scattering.
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通过偏振拉曼散射研究显示 V 形开关的近晶液晶的取向分布。
DOI：
10.1103/physreve.65.041714
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
S. Seomun
中科院分区：
文献类型：
--
作者：
N. Hayashi;Tatsuhisa Kato;T. Aoki;T. Ando;A. Fukuda;S. Seomun
用拉曼散射方法测定了两种液晶材料的取向有序参数，在薄的均匀盒中显示出V型转变。一种是Mitsui混合物，另一种是Inui混合物的一种成分。反铁电相存在于这两种材料的主体中，但在薄的均匀单元中，稳定性彼此不同。在V形尖端的局部面内指向矢的分布在前者中是相当宽的，而在后者中是窄的。这些差异已被解释之间的障碍的铁电和反铁电有序，手征扭曲的权力，和界面诱导破坏的反铁电有序。
Molecular orientational order parameters have been obtained by Raman scattering in two types of liquid crystal materials showing the V-shaped switching in thin homogeneous cells. One is the Mitsui mixture and the other is one component of the Inui mixture. The antiferroelectric phase exists in the bulk of both materials but, in thin homogeneous cells, the stability is distinct from each other. The obtained distribution of the local in-plane directors at the tip of the V is considerably broad in the former, while it is narrow in the latter. These differences have been explained by the barrier between the ferroelectric and antiferroelectric orderings, the chiral twisting power, and the interface induced destruction of the antiferroelectric ordering.