Influence of deposition conditions on Ir/IrO2 oxygen barrier effectiveness
Influence of deposition conditions on Ir/IrO2 oxygen barrier effectiveness
复制标题
沉积条件对 Ir/IrO2 阻氧效果的影响
DOI：
10.1063/1.1471574
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
K. Samwer
中科院分区：
文献类型：
--
作者：
C. Pinnow;I. Kasko;N. Nagel;S. Poppa;T. Mikolajick;C. Dehm;W. Hösler;F. Bleyl;F. Jahnel;M. Seibt;U. Geyer;K. Samwer
The influence of the deposition temperature during the reactive sputtering process on the microstructure of thin Ir and IrO2 films deposited on oxidized Si substrates was investigated and related to the oxygen barrier effectiveness. For this purpose differential thermal analysis combined with residual gas analysis by mass spectrometry was used for the investigation of the microstructural and chemical behavior of the as-sputtered IrO2 films upon heating. Moreover, in situ stress relaxation analyses up to 900 °C, in and ex situ x-ray diffraction measurements were done for various annealing conditions. The investigated polycrystalline IrO2 films exhibited a large compressive stress and a distorted lattice due to the sputter deposition process. It is demonstrated that a high deposition temperature involves a delayed relaxation of the IrO2 grains which is causing an extrinsic, enhanced defect controlled oxygen mobility for the annealing temperatures below the recrystallization. The well-known low intrinsic oxy...
