The Chiral Anomaly and Ultrahigh Mobility in Crystalline HfTe5
The Chiral Anomaly and Ultrahigh Mobility in Crystalline HfTe5
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DOI：
10.1103/physrevb.93.165127
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发表时间：
2015-12
影响因子：
3.7
通讯作者：
Huichao Wang;Chao-Kai Li;Haiwen Liu;Jiaqiang Yan;Junfeng Wang;Jun Liu;Ziquan Lin;Yanan Li
中科院分区：
文献类型：
--
作者：
Huichao Wang;Chao-Kai Li;Haiwen Liu;Jiaqiang Yan;Junfeng Wang;Jun Liu;Ziquan Lin;Yanan Li
HfTe5被预测为研究拓扑相的一个有前途的平台。通过电输运研究，我们首次观察到HfTe5晶体的手性异常和超高迁移率。当外加磁场和电场平行（B//E）时，HfTe5的磁电阻率为负，一旦B偏离E方向，磁电阻率迅速消失，定量拟合进一步证实了手性异常是潜在的物理现象。此外，通过分析纵向和霍尔走线的导电性张量，揭示了HfTe5的超高迁移率和超低载流子密度，为其潜在的电子应用铺平了道路。
HfTe5 is predicted to be a promising platform for studying topological phases. Here through an electrical transport study, we present the first observation of chiral anomaly and ultrahigh mobility in HfTe5 crystals. Negative magneto-resistivity in HfTe5 is observed when the external magnetic and electrical fields are parallel (B//E) and quickly disappears once B deviates from the direction of E. Quantitative fitting further confirms the chiral anomaly as the underlying physics. Moreover, by analyzing the conductivity tensors of longitudinal and Hall traces, ultrahigh mobility and ultralow carrier density are revealed in HfTe5, which paves the way for potential electronic applications.