Single detectors and pixel arrays based on TIBr

Single detectors and pixel arrays based on TIBr
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基于 TIBr 的单探测器和像素阵列

DOI:
10.1109/nssmic.2001.1009307
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发表时间:
2001
期刊:
2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310)
影响因子:
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通讯作者:
S. Zatoloka
S. Zatoloka
中科院分区:
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文献类型:
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作者:
V. Gostilo;Alan Owens;Marcos Bavdaz;I. Lisjutin;Anthony J. Peacock;Hannu T. Sipila;S. Zatoloka

文献摘要

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对通过水热法和布里奇曼 - 斯托克巴格(Bridgeman - Stockbarger)法生长的溴化铊(TlBr)晶体作为X射线和伽马射线潜在的单探测器和像素探测器进行了研究。报道了由TlBr晶体制造探测器的技术。给出了由单个TlBr探测器测量的放射性核素Fe - 55、Am - 241、Cd - 109、Co - 57和Cs - 137的能谱。在5.9 keV时实现了500 eV的半高宽能量分辨率;在9.87 keV时为518 eV;在13.92 keV时为670 eV;在22.1 keV时为777 eV;在59.5 keV时为2.7 keV;在88 keV时为3.7 keV;在122 keV时为4.4 keV;在662 keV时为29 keV。还在尺寸为2.7×2.7×1.0 mm³的单个TlBr晶体上制作了小尺寸(3×3)像素探测器,其焊盘为0.35×0.35 mm,间隙为0.1 mm。在50 V偏压下测量的像素间电阻率为400 - 600 GΩ。在250 V偏压下像素的泄漏电流通常小于0.5 nA。在 - 30°C的温度、6 μs的成形时间常数和400 V的高压下获得了最佳能谱。在输入能量分别为59.5、88、122和662 keV时,测量到的能量分辨率分别为2.2、3.0、3.7和29 keV。对布里奇曼 - 斯托克巴格法生产的两种不同的铸锭评估了μτ值。对于一个在30°C的铸锭,它们是μcτc = 2.5×10⁻⁴ cm²/V⁻¹和μhτh≈10⁻⁶ cm²/V⁻¹;对于另一个在 - 10°C的铸锭,它们是μeτe = 7×10⁻⁵ cm²/V⁻¹和μhτh = 1.5×10⁻⁵ cm²/V⁻¹。
TIBr crystals, grown by hydrothermal and Bridgeman-Stockbarger methods, were investigated as potential single and pixel detectors of X-, and gamma-radiation. The technology of detectors manufacture from TlBr crystals is reported. The spectra of the radionuclides Fe-55, Am-241, Cd-109, Co-57 and Cs-137, measured by single TlBr detectors are presented. FWHM energy resolutions of 500 eV at 5.9 keV; 518 eV at 9.87 keV; 670 eV at 13.92 keV; 777 eV at 22.1 keV; 2.7 keV at 59.5 keV; 3.7 keV at 88 keV; 4.4 keV at 122 keV and 29 keV at 662 keV have been achieved. Small format (3/spl times/3) pixel detectors with pads 0.35/spl times/0.35 mm and gap 0.1 mm were also fabricated on single TIBr crystals of dimensions 2.7/spl times/2.7/spl times/1.0 mm/sup 3/. The interpixel resistivities measured at a bias of 50 V were 400-600 GOhm. The pixel leakage currents at a bias of 250 V were typically less than 0.5 nA. The best spectra were obtained at a temperature of -30/spl deg/C, a shaping time constant of 6 /spl mu/s and high voltage of 400 V. Energy resolutions of 2.2, 3.0, 3.7 and 29 keV were measured at input energies of 59.5, 88, 122 and 662 keV, respectively. Values of /spl mu//spl tau/ have been evaluated for two different ingots produced by the Bridgeman-Stockbarger method. They are /spl mu//sub c//spl tau//sub c/=2.5/spl times/10/sup -4/ cm/sup 2/V/sup -1/ and /spl mu//sub h//spl tau//sub h//spl sim/10/sup -6/ cm/sup 2/V/sup -1/ for one ingot at 30/spl deg/C and /spl mu//sub e//spl tau//sub e/=7/spl times/10/sup -5/ cm/sup 2/ V/sup -1/ and /spl mu//sub h//spl tau//sub h/=1.5/spl times/10/sup -5/ cm/sup 2/ V/sup -1/ for the other ingot at -10/spl deg/C.