Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance
Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance
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DOI：
10.1109/tpel.2012.2195332
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发表时间：
2013-01-01
影响因子：
6.7
通讯作者：
Li, River Tin-ho
中科院分区：
文献类型：
--
作者：
Wang, Jianjing;Chung, Henry Shu-hung;Li, River Tin-ho
本文全面研究了寄生元件对MOSFET开关特性的影响。一个电路级的分析模型，考虑MOSFET的寄生电容和电感，电路杂散电感，和续流二极管的反向电流的考虑，以评估MOSFET的开关特性。仿真MOSFET开关瞬态推导出的方程进行了图形评估，这相比，仅仅从仿真或参数研究得到的结果，可以提供更好的洞察开关性能的变化在于当寄生元件的变化。分析已成功地证实了400 V，6 A的测试台的实验结果。这些寄生效应现象背后的物理意义的讨论。寄生元件对开关特性的影响是快速开关功率变换器设计的重要依据。
This paper presents a comprehensive study on the influences of parasitic elements on the MOSFET switching performance. A circuit-level analytical model that takes MOSFET parasitic capacitances and inductances, circuit stray inductances, and reverse current of the freewheeling diode into consideration is given to evaluate the MOSFET switching characteristics. The equations derived for emulating MOSFET switching transients are assessed graphically, which, compared to results obtained merely from simulation or parametric study, can offer better insight into where the changes in switching performance lie when the parasitic elements are varied. The analysis has been successfully substantiated by the experimental results of a 400 V, 6 A test bench. A discussion on the physical meanings behind these parasitic effect phenomena is included. Knowledge about the effects of parasitic elements on the switching behavior serves as an important basis for the design guidelines of fast switching power converters.