Synthesis of carbon nanowalls by plasma-enhanced chemical vapor deposition in a CO/H2 microwave discharge system
Synthesis of carbon nanowalls by plasma-enhanced chemical vapor deposition in a CO/H2 microwave discharge system
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DOI：
10.1016/j.diamond.2011.06.021
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发表时间：
2011-08-01
影响因子：
4.1
通讯作者：
Suzuki, Masaaki
中科院分区：
文献类型：
--
作者：
Mori, Shinsuke;Ueno, Takanori;Suzuki, Masaaki
在CO/H-2微波放电系统中，采用等离子体增强化学气相沉积技术合成了碳纳米壁。最佳CO/H-2进料比为46 sccm/4次扫描。可以合成厚度约为几十纳米的排列碳纳米壁。在我们的系统中，在生长面积为1 cm(2)的情况下，以相对较低的60W微波放电功率获得了1 μ m min（-1）的极高生长速率。用发射光谱法研究了CO/H-2放电体系的特性。(C) 2011 Elsevier B.V.版权所有
Synthesis of carbon nanowalls was performed by a plasma-enhanced chemical vapor deposition in a CO/H-2 microwave discharge system. At the optimum CO/H-2 feed ratio of 46 sccm/4 scan. the aligned carbon nanowalls with thickness of about several tens of nanometers were able to be synthesized. The extremely high growth rate of 1 mu m min(-1) was obtained in our system with a relatively low microwave discharge power of 60W for a growth area of 1 cm(2). An optical emission spectroscopy was performed to clarify the characteristics of a CO/H-2 discharge system. (C) 2011 Elsevier B.V. All rights reserved.