Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography
Fabrication of photonic crystals in silicon-on-insulator using 248-nm deep UV lithography
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DOI：
10.1109/jstqe.2002.800845
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发表时间：
2002-07-01
影响因子：
4.9
通讯作者：
Baets, R
中科院分区：
文献类型：
--
作者：
Bogaerts, W;Wiaux, V;Baets, R
我们展示了波长级的光子纳米结构，包括光子晶体，制造在绝缘体上的硅深紫外（UV）光刻。我们讨论了大规模生产的能力，深紫外光刻相比，电子束光刻。实验结果说明了这一点。最后，我们提出了一些问题时，试图使用已建立的互补金属氧化物半导体工艺的光子集成电路的制造。
We demonstrate wavelength-scale photonic nanostructures, including photonic crystals, fabricated in silicon-on-insulator using deep ultraviolet (UV) lithography. We discuss the mass-manufacturing capabilities of deep UV lithography compared to e-beam lithography. This is illustrated with experimental results. Finally, we present some of the issues that arise when trying to use established complementary metal-oxide-semiconductor processes for the fabrication of photonic integrated circuits.