Effect of V2O5 Doping on the Sintering and Dielectric Properties of M‐Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics
Effect of V2O5 Doping on the Sintering and Dielectric Properties of M‐Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics
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DOI：
10.1111/j.1551-2916.2004.01047.x
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发表时间：
2004-06
影响因子：
3.9
通讯作者：
A. Borisevich;P. Davies
中科院分区：
文献类型：
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作者：
A. Borisevich;P. Davies
研究了添加V2 O 5对M相（Li 1 +x− yNb 1 −x− 3 yTix +4 y）O3陶瓷的结构、烧结和介电性能的影响。在LiNb0.6（1-x）V0.6xTi0.5O3中，当x≤ 0.02时，获得了V5+对Nb 5+的均匀取代。V2 O 5的加入导致烧结温度的大幅降低，并且x= 0.02的样品可以在900°C下完全致密化。氧化钒的取代对M相系统的微波介电性能具有相对较小的不利影响，并且x= 0.02的陶瓷在5.6 GHz下具有[alt_r]r= 66，Q×f= 3800，τf= 11 ppm/°C。初步研究表明，银金属化不会扩散到V2 O 5掺杂的M相陶瓷在900°C，使这些材料的低温共烧陶瓷（LTCC）应用的潜在候选人。
The effect of the addition of V2O5 on the structure, sintering and dielectric properties of M-phase (Li1+x−yNb1−x−3yTix+4y)O3 ceramics has been investigated. Homogeneous substitution of V5+ for Nb5+ was obtained in LiNb0.6(1−x)V0.6xTi0.5O3 for x≤ 0.02. The addition of V2O5 led to a large reduction in the sintering temperature and samples with x= 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M-phase system and the x= 0.02 ceramics had [alt epsilon]r= 66, Q×f= 3800 at 5.6 GHz, and τf= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V2O5-doped M-phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.