Multilayer anisotropic magnetoresistive angle sensor
Multilayer anisotropic magnetoresistive angle sensor
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DOI：
10.1016/j.sna.2017.06.001
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发表时间：
2017-08
影响因子：
4.6
通讯作者：
Yue Guo;Yong Deng;Shan X. Wang
中科院分区：
文献类型：
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作者：
Yue Guo;Yong Deng;Shan X. Wang
本文提出了一种多层各向异性磁阻 (AMR) 传感堆栈，用于高精度角度传感。制作了四层 AMR 角度传感器，其检测误差比传统的单层 AMR 角度传感器更小。根据频谱分析，AMR 角度传感器的固有误差可归因于两个主要来源。一种是由感应各向异性引起的二次谐波误差，另一种是由形状各向异性引起的八次谐波误差。所制造的带有校正算法的四层 AMR 角度传感器相对于传统单层器件将角度误差减少了 5 倍。此外，四层 AMR 角度传感器可以在 100 Oe 以下的低磁场下工作，从而可以使用更弱、更小、更便宜的硬磁体进行磁场传感。因此，目前的四层AMR角度传感器在许多工业应用中显示出巨大的潜力。
A multilayer anisotropic magnetoresistive (AMR) sensing stack has been proposed in this paper for high accuracy angle sensing. A quadruple-layer AMR angle sensor was fabricated and showed smaller detection errors than traditional single-layer AMR angle sensors. Based on spectral analysis, intrinsic errors in AMR angle sensors can be attributed to two dominant sources. One is the second harmonic error due to induced anisotropy, and the other is the eighth harmonic error from shape anisotropy. The fabricated quadruple-layer AMR angle sensor with correction algorithm reduces angular errors by a factor of 5 relative to the traditional single-layer device. In addition, the quadruple-layer AMR angle sensor can be operated at low magnetic fields under 100 Oe, enabling the use of weaker, smaller, and cheaper hard magnets for magnetic field sensing. Therefore, the present quadruple-layer AMR angle sensor shows great potential for many industrial applications.