Low-temperature direct bonding of poly(methyl methacrylate) for polymer microchips
Low-temperature direct bonding of poly(methyl methacrylate) for polymer microchips
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DOI：
10.1002/tee.20157
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发表时间：
2007-05-01
影响因子：
1
通讯作者：
Shoji, Shuichi
中科院分区：
文献类型：
--
作者：
Shinohara, Hidetoshi;Mizuno, Jun;Shoji, Shuichi
采用常压氧等离子体、真空氧等离子体、紫外（UV）/臭氧、真空紫外（VUV）/臭氧等表面处理方法，对聚甲基丙烯酸甲酯（PMMA）板材进行了低温直接键合。通过拉伸试验评价，在低于玻璃化转变温度（Tg）时达到合理的结合强度。在50摄氏度的退火温度和10分钟2.5 MPa的施加压力下，所获得的结果中的最高结合强度为1.43 MPa（约为常规直接结合值的三倍）。低温结合防止PMMA微结构的变形。使用Si模具通过热压印制造了具有5 μ m深度细通道的原型PMMA微芯片。在大气压氧等离子体活化后，在75 ℃的退火温度和3 MPa的施加压力下进行直接键合3 min。该方法提供了良好的键合特性，没有变形和泄漏。这种低温键合技术可以应用于聚合物微/纳米结构。(c)2007年，日本电气工程师学会。出版社：John Wiley & Sons，Inc.
A low-temperature, direct bonding method for poly(methyl methacrylate) (PMMA) plates has been developed by employing surface treatment by atmospheric pressure oxygen plasma, vacuum oxygen plasma, ultraviolet (UV)/ozone or vacuum ultraviolet (VUV)/ozone. Reasonable bonding strength, as evaluated by a tensile test, was achieved below the glass transition temperature (T,). The highest bonding strength among the achieved results is 1.43 MPa (about three times the value for conventional direct bonding) at an annealing temperature of 50 degrees C and an applied pressure of 2.5 MPa for 10 min. Low-temperature bonding prevents deformation of the PMMA microstructure. A prototype PMMA microchip that has fine channels of 5 pm depth was fabricated by hot-embossing using a Si mold. After atmospheric pressure oxygen plasma activation, direct bonding was carried out at an annealing temperature of 75 degrees C and an applied pressure of 3 MPa for 3 min. The method gives Good bonding characteristics without deformation and leakage. This low-temperature bonding technology can be applied to polymer micro/nano structures. (c) 2007 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.