Theory of the Topological Anderson Insulator
Theory of the Topological Anderson Insulator
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DOI：
10.1103/physrevlett.103.196805
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发表时间：
2009-11-06
影响因子：
8.6
通讯作者：
Beenakker, C. W. J.
中科院分区：
文献类型：
--
作者：
Groth, C. W.;Wimmer, M.;Beenakker, C. W. J.
我们提出了一种有效的介质理论，可以解释在 HgTe 量子阱的计算机模拟中发现的无序引起的量子电导相转变。它是随机势和与狄拉克哈密顿量 p(2)sigma(z) 成比例的二次校正的组合，可以将普通带绝缘体驱动为拓扑绝缘体（具有倒带隙）。我们计算了弱无序状态下相界的位置，并表明它对应于能带边缘的交叉而不是迁移率边缘。我们形成拓扑安德森绝缘体的机制是通用的，并且也适用于具有强自旋轨道耦合的三维半导体。
We present an effective medium theory that explains the disorder-induced transition into a phase of quantized conductance, discovered in computer simulations of HgTe quantum wells. It is the combination of a random potential and quadratic corrections proportional to p(2)sigma(z) to the Dirac Hamiltonian that can drive an ordinary band insulator into a topological insulator (having an inverted band gap). We calculate the location of the phase boundary at weak disorder and show that it corresponds to the crossing of a band edge rather than a mobility edge. Our mechanism for the formation of a topological Anderson insulator is generic, and would apply as well to three-dimensional semiconductors with strong spin-orbit coupling.