Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction
Broadband Phototransistor Based on CH3NH3PbI3 Perovskite and PbSe Quantum Dot Heterojunction
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基于CH3NH3PbI3钙钛矿和PbSe量子点异质结的宽带光电晶体管
DOI：
10.1021/acs.jpclett.6b02423
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发表时间：
2017
影响因子：
5.7
通讯作者：
Yao Jianquan
中科院分区：
文献类型：
--
作者：
Yu Yu;Zhang Yating;Zhang Zhang;Zhang Haiting;Song Xiaoxian;Cao Mingxuan;Che Yongli;Dai Haitao;Yang Junbo;Wang Jianlong;Zhang Heng;Yao Jianquan
有机卤化铅钙钛矿自出现以来，由于其在光电子器件中的巨大应用潜力，引起了人们极大的兴趣。在这里，我们展示了基于CH3NH3PbI3钙钛矿/PbSe胶体量子点异质结的场效应光电晶体管。高的光吸收和光电转换效率，由于钙钛矿和量子点的结合，保持了很高的响应度，特别是在460 nm，高达1.2A/W。光电晶体管表现出双极行为，载流子迁移率为0.147 cm2V-1s-1空穴和0.16cm2V-1s-1电子。该器件具有从300到1500 nm的宽光谱响应光谱。由于异质结对光激子传输的辅助作用，其短的光响应时间小于3ms。该器件所表现出的优异性能特别强调了CH3NH3PbI3钙钛矿-PbSe量子点作为一种具有未来光电应用前景的材料。
Organic lead halide perovskites have received a huge amount of interest since emergence, because of tremendous potential applications in optoelectronic devices. Here field effect phototransistors (FEpTs) based on CH3NH3PbI3perovskite/PbSe colloidal quantum dot heterostructure are demonstrated. The high light absorption and optoelectric conversion efficiency, due to the combination of perovskite and quantum dots, maintain the responsivities in a high level, especially at 460 nm up to 1.2 A/W. The phototransistor exhibits bipolar behaviors, and the carrier mobilities are determined to be 0.147 cm2V–1s–1for holes and 0.16 cm2V–1s–1for electrons. The device has a wide spectral response spectrum ranging from 300 to 1500 nm. A short photoresponse time is less than 3 ms due to the assistance of heterojunction on the transfer of photoexcitons. The excellent performances presented in the device especially emphasize the CH3NH3PbI3perovskite–PbSe quantum dot as a promising material for future photoelectronic applications.