Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions
Area-selective regrowth followed by AsH3 surface treatment and its application for ultra-shallow GaAs sidewall tunnel junctions
复制标题
AsH3 表面处理后的区域选择性再生长及其在超浅 GaAs 侧壁隧道结中的应用
DOI：
10.1016/s0169-4332(03)00506-3
复制
发表时间：
2003
影响因子：
6.7
通讯作者：
J. Nishizawa
中科院分区：
文献类型：
--
作者：
T. Ohno;Y. Oyama;K. Tezuka;K. Suto;J. Nishizawa
采用超高真空间歇注入三乙基镓(TeGA)和砷(AsH3)的低温(2 90℃)面选择再生长技术，制备了结面积为10−8cm2的超浅侧壁砷化镓隧道结.制作的隧道结在100μm长的带状结构下显示出创纪录的峰值电流密度，高达35,000A/cm2。结果表明，隧道结的特性严重依赖于侧壁取向和再生界面质量，而再生长界面质量是由AsH3溶液中再生前的表面处理条件决定的。从Be掺杂的取向依赖性和表面化学计量比控制的角度，讨论了Be掺杂的结特性和AsH3表面处理效果。
Low-temperature (290°C) area-selective regrowth (ASR) by the intermittent injection of triethylgallium (TEGa) and arsine (AsH3) in an ultra-high vacuum (UHV) was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions with the junction area in the order of 10−8cm2. Fabricated tunnel junctions have shown the record peak current density up to 35,000A/cm2at 100μm long strip structure. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which was determined by the surface treatment conditions under AsH3just prior to regrowth. The junction characteristics and AsH3surface treatment effects are discussed in view of the orientation dependence of Be doping and control of surface stoichiometry.