Energy gap measurement of nanostructured aluminium thin films for single Cooper-pair devices
Energy gap measurement of nanostructured aluminium thin films for single Cooper-pair devices
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DOI：
10.1088/0953-2048/21/01/015013
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发表时间：
2008-01-01
影响因子：
3.6
通讯作者：
Clark, R. G.
中科院分区：
文献类型：
--
作者：
Court, N. A.;Ferguson, A. J.;Clark, R. G.
我们测量了Al-Al(2)O(3)-Al隧道结的超导能隙随铝膜厚度的变化。用厚度为5、7、10和30 nm的薄膜形成了小面积的超导体-绝缘体-超导隧道结。与以前的测量结果一致，我们观察到铝的超导能隙随膜厚的减小而增大。此外，我们还发现厚度为>；=10 nm的小面积薄膜的晶粒度对能隙没有明显的影响。最后，我们利用单个库珀对晶体管中的7 nm和30 nm薄膜，观察到由于设计的带隙分布而引起的有限偏压传输过程的改变。
We report measurements of the superconducting gap in Al-Al(2)O(3)-Al tunnel junctions as a function of aluminium film thickness. Films of thickness 5, 7, 10 and 30 nm were used to form the small-area superconductor-insulator-superconductor tunnel junctions. In agreement with previous measurements we have observed an increase in the superconducting energy gap of aluminium with a decrease in film thickness. In addition, we find grain size in small-area films with thickness >= 10 nm has no appreciable effect on the energy gap. Finally, we utilize 7 and 30 nm films in a single Cooper-pair transistor and observe the modification of the finite bias transport processes due to the engineered gap profile.