Preparation of large step-free mesas on Si(111) by molecular beam epitaxy
Preparation of large step-free mesas on Si(111) by molecular beam epitaxy
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分子束外延在Si(111)上制备大型无台阶台面
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
H. Osten
中科院分区：
文献类型：
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作者：
A. Fissel;J. Krügener;H. Osten
用原子力显微镜研究了在（7 × 7）-“1 × 1”表面相变温度附近台面结构Si（111）上分子束外延的表面形貌发展。表面形貌的显着变化，发现一个小的温度增加附近的表面相变伴随着强烈的增加，在无台阶区域尺寸。这将讨论在一定条件下的两个表面相的同时出现和它们对生长行为的具体影响。在1080 K下生长后出现小的三角形岛和空洞，表明较大的无台阶区域的表面不稳定性。在1120 K下以1 nm/min的速率生长导致在10 × 10 µm2台面上形成原子级无台阶表面，没有任何不规则性。（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Development of surface morphology in Si molecular beam epitaxy on mesa-structured Si(111) at temperatures around the (7x7) –“1x1” surface phase transition was studied using atomic force microscopy. Significant changes in surface morphology were found for a small increase in temperature near the surface phase transition accompanied by a strong increase in step-free area dimension. This will be discussed with regard to the simultaneous appearance of the two surface phases under certain condition and their specific influence on the growth behaviour. Small triangular islands and voids appeared after growth at 1080 K indicating surface instability of larger step-free areas. Growth at 1120 K with a rate of 1 nm/min results in the formation of atomically step-free surface over 10x10 µm2 mesas without any irregularities. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)