Resonant enhancement of impact in Ga1−xAlxSb
Resonant enhancement of impact in Ga1−xAlxSb
复制标题
Ga1−xAlxSb 中冲击的共振增强
DOI：
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发表时间：
1980
期刊：
影响因子：
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通讯作者：
M. Pilkuhn
中科院分区：
文献类型：
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作者：
O. Hildebrand;W. Kuebart;M. Pilkuhn
测量了Ga 1 −xAlxSb雪崩光电二极管在0 μ x<0.3时的碰撞电离系数α和β。空穴电离系数β显示出很强的能带结构效应：在x=0.065（300 K）处的共振增强，这是由于空穴从自旋轨道分裂价带开始电离过程。当自旋轨道分裂Δ等于带隙能量Eg（共振条件）时，β/α可以超过20。空穴电离系数指数地依赖于能量和带隙能量Ei-Eg之间的差。
Impact ionization coefficients α and β of Ga1−xAlxSb avalanche photodiodes were measured for 0⩽x<0.3. The hole ionization coefficient β shows a strong band‐structure effect: a resonant enhancement at x=0.065 (300 K) due to initiation of the ionization process by holes from the spin‐orbit splitoff valence band. β/α can exceed values of 20 when the spin‐orbit splitting Δ is equal to the band‐gap energy Eg (resonant condition). The hole ionization coefficient depends exponentially on the difference between energy and band‐gap energy Ei−Eg.