Characterization of surface defects by means of laser-induced Ga0 emission from GaP surfaces
Characterization of surface defects by means of laser-induced Ga0 emission from GaP surfaces
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通过 GaP 表面的激光诱导 Ga0 发射表征表面缺陷
DOI：
10.1088/0953-8984/3/36/005
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
R. Haglund
中科院分区：
文献类型：
--
作者：
K. Hattori;A. Okano;Y. Nakai;N. Itoh;R. Haglund
作者对亚能隙光子能量的激光脉冲引起的清洁GaP（110）表面Ga_0中性粒子的发射进行了高灵敏度的测量。他们发现，在表面损伤演化的尖锐阈值激光能量密度以下，Ga 0原子的发射产率降低，遵循两个指数函数，具有相同能量密度的重复脉冲。这两种衰变归因于由两种不同类型的缺陷引发的喷射。这些测量结果被证明是有用的，用于表征极小浓度的缺陷。
The authors have carried out high-sensitivity measurements of the emission of Ga0 neutrals from a clean GaP (110) surface induced by laser pulses of subgap photon energies. They found that, below a sharp threshold laser fluence for evolution of surface damage, the emission yield of Ga0 atoms decreases, following two exponential functions, with repeating pulses of the same fluence. These two decays are ascribed to the ejection initiated by defects of two different types. These measurements are shown to be useful for characterizing defects of extremely small concentration.
影响因子：
8.6
作者：
G. Binnig;H. Rohrer;C. Gerber;E. Weibel
通讯作者：
G. Binnig;H. Rohrer;C. Gerber;E. Weibel