Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes
Effect of quasibound‐state lifetime on the oscillation power of resonant tunneling diodes
复制标题
准束缚态寿命对谐振隧道二极管振荡功率的影响
DOI：
10.1063/1.100812
复制
发表时间：
1989
影响因子：
4
通讯作者：
T. Sollner
中科院分区：
文献类型：
--
作者：
E. Brown;C. Parker;T. Sollner
推导了双势垒谐振隧道二极管的新等效电路。该电路的一个基本特征是添加了一个与器件的微分电导 G 串联的电感。电感的大小为 τN/G，其中 τN 是假设所有传导电流都流经的（第 N）准束缚态的寿命。该电路模型用于推导理论振荡器功率值，与没有电感的理论预测相比，该值与实验结果更加一致。结论是，双势垒结构对时变电势的响应与共振隧道效应的相干图一致。
A new equivalent circuit is derived for the double‐barrier resonant tunneling diode. An essential feature of this circuit is the addition of an inductance in series with the differential conductance G of the device. The magnitude of the inductance is τN/G where τN is the lifetime of the (Nth) quasibound state through which all of the conduction current is assumed to flow. This circuit model is used to derive values of theoretical oscillator power that are in much better agreement with experimental results than theoretical predictions made without the inductance. The conclusion is drawn that the response of the double‐barrier structure to a time varying potential is consistent with the coherent picture of resonant tunneling.