Extraction and Analysis of Gamma Irradiated Si BJT SPICE Model

Extraction and Analysis of Gamma Irradiated Si BJT SPICE Model
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DOI:
10.1149/2.0191901jss
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发表时间:
2019-02
影响因子:
2.2
通讯作者:
O. M. Lawal;Shuhuan Liu;Ta-Chien Huang
O. M. Lawal;Shuhuan Liu;Ta-Chien Huang
中科院分区:
材料科学4区
文献类型:
--
作者:
O. M. Lawal;Shuhuan Liu;Ta-Chien Huang

文献摘要

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利用Altium Designer(AD)/SPICE模型向导提取了辐照前后硅双极型晶体管(SiBJT)的SPICE模型参数。估算了现有BJT(Zetex BCW72)SPICE模型正、反向偏置参数之间的百分比变化(Δ%),并计算了辐照前后Si BJT实验数据之间的退化Δ%。然后将比较后的新测量结果导入AD/SPICE模型向导中,提取正向偏置参数。提取的正向偏置参数通过Δ%生成反向偏置参数。最终提取的Si BJT SPICE模型参数在SPICE模拟器中实现,得到正反向Gummel图。正如预期的那样,基极电流(IB)增加,集电极电流(IC)在低偏置基极-发射极电压下略有增加,由于正电荷捕获在BJT器件的氧化物和界面中,导致电流增益下降。此外,正向Gummel中的IB的结果与基极-发射极结平行流动,而反向Gummel中的IB通过基极-集电极结向下流动,通过集电区到达背面的集电极接触。最后,将SiBJT正演Gummel模拟结果与实验数据进行了比较,结果吻合较好。
The Simulation Program with Integrated Circuit Emphasis (SPICE) model parameters of pre and post-irradiated silicon bipolar junction transistor (Si BJT) were extracted with the use of Altium Designer (AD)/SPICE model wizard. The percentage changes (Δ%) between forward and reverse-bias parameters of existing BJT (ZETEX BCW72) SPICE model were estimated and also the degradation Δ% between the experimental data of pre and post-irradiated Si BJT were calculated. Then the new measured results by comparison were imported into AD/SPICE model wizard to extracts forward-bias parameters. The extracted forward-bias parameters were used to generate reverse-bias parameters through Δ%. The final extracted Si BJT SPICE model parameters were implemented in SPICE simulator to obtained forward and reverse Gummel plots. As expected, base current (IB) increases, the collector current (IC) increases slightly at low bias base-emitter voltage, leading to current gain degradation due to positive charge trapped in the oxide and interface of the BJT device. In addition, the results of the IB in the forward Gummel flows in parallel with base-emitter junction, while the IB in the reverse Gummel flows across the base-collector junction down to the back side collector contact through the collector region. Finally, the compared results of Si BJT forward Gummel simulation and experimental data showed good agreement.