Monolithic active pixel detector realized in silicon on insulator technology
Monolithic active pixel detector realized in silicon on insulator technology
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DOI：
10.1016/j.nima.2004.07.160
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发表时间：
2004-12-11
影响因子：
1.4
通讯作者：
Tomaszewski, D
中科院分区：
文献类型：
--
作者：
Bulgheroni, A;Caccia, M;Tomaszewski, D
本文介绍了一种新型的单片硅像素探测器的研制，它利用绝缘体上硅衬底的读出电子学和像素探测器的集成。在所讨论的解决方案中，读出CMOS电路被制造在掩埋氧化物上方的薄器件层中，而像素矩阵被创建在Sol衬底的高电阻处理晶片中。溶胶传感器的小测试矩阵最近已经制造，并与红外激光和放射源的初步测试表明传感器的电离辐射的灵敏度。的概念和设计的溶胶探测器连同传感器矩阵的初步测量结果的文件中解决。(C)2004 Elsevier B.V.保留所有权利。
The paper concerns the development of a novel monolithic silicon pixel detector, which exploits Silicon on Insulator substrates for the integration of the readout electronics and pixel detector. In the discussed solution, the readout CMOS circuit is manufactured in the thin device layer over the buried oxide while the pixel matrix is created in the high resistive handle wafer of the Sol substrate. Small test matrices of the Sol sensor have been recently manufactured and preliminary tests with an infrared laser light and a radioactive source indicated the sensor sensitivity for the ionizing radiation. The concept and design of the Sol detector together with the preliminary measurement results of the sensor matrices are addressed in the paper. (C) 2004 Elsevier B.V. All rights reserved.