Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping
Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping
复制标题
通过纵横比捕获在虚拟 Ge 衬底上单片集成 GaAs/InGaAs 激光器
DOI：
10.1149/1.3129463
复制
发表时间：
2009
影响因子：
3.9
通讯作者：
Z. Shellenbarger
中科院分区：
文献类型：
--
作者：
J. Li;J. Hydrick;Ji;J. Li;J. Bai;Z. Cheng;M. Carroll;J. Fiorenza;Anthony Lochtefeld;W. Chan;Z. Shellenbarger
GaAs/InGaAs量子阱激光器已经通过金属有机化学气相沉积在Si上的虚拟Ge衬底上，通过纵横比捕获（ART）和外延横向过生长（ELO）来实现。激光结构生长分两步实现：第一步是通过ART在SiO2沟槽图案化的硅衬底上生长未聚结的无缺陷Ge条带，由此源于Ge/Si界面的失配缺陷被横向限制的侧壁捕获。采用优化的ELO工艺，通过化学机械抛光获得平坦的Ge表面，减少了Si O2膜上的缺陷。第二步是在虚拟Ge衬底上生长GaAs/InGaAs激光器结构。许多GaAs/Ge集成问题，包括Ge自掺杂和GaAs中的反相畴缺陷，已经被克服。尽管未优化的激光器结构具有高的串联电阻和大的阈值电流密度，脉冲室温激光在980 nm的波长已被证明使用ART和ELO的组合。这种技术是非常有前途的实现可靠的GaAs基光电器件的Si。
GaAs/InGaAs quantum-well lasers have been demonstrated by metallorganic chemical vapor deposition on virtual Ge substrates on Si via aspect-ratio trapping (ART) and epitaxial lateral overgrowth (ELO). Laser-structure growth is achieved in two steps: The first step is growing uncoalesced defect-free Ge stripes on a SiO 2 trench-patterned silicon substrate via ART, whereby the misfit defects originating from the Ge/Si interface are trapped by laterally confining sidewalls. Defects arising from above the SiO 2 film are reduced by using an optimized ELO process followed by chemical mechanical polishing to provide a planar Ge surface. The second step is overgrowing a GaAs/InGaAs laser structure on the virtual Ge substrate. A number of GaAs/Ge integration issues, including Ge autodoping and antiphase domain defects in GaAs, have been overcome. Despite unoptimized laser structures with high series resistance and large threshold current densities, pulsed room-temperature lasing at a wavelength of 980 nm has been demonstrated using a combination of ART and ELO. This technique is very promising for the achievement of reliable GaAs-based optoelectronic devices on Si.