High‐Speed Preparation of Highly (100)‐Oriented CeO2 Film by Laser Chemical Vapor Deposition
High‐Speed Preparation of Highly (100)‐Oriented CeO2 Film by Laser Chemical Vapor Deposition
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DOI：
10.1111/jace.14279
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发表时间：
2016-09
影响因子：
3.9
通讯作者：
P. Zhao;Shi Su;Ying Wang;C. Chi;Zhanhui Zhang;Yangwu Mao;Z. Huang;Y. Xu;T. Goto
中科院分区：
文献类型：
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作者：
P. Zhao;Shi Su;Ying Wang;C. Chi;Zhanhui Zhang;Yangwu Mao;Z. Huang;Y. Xu;T. Goto
采用激光化学气相沉积法在（100）LaAlO 3单晶衬底上制备了CeO 2薄膜，沉积温度为947 ~ 1096 K，对应的激光功率为52 ~ 185 W。在1027-1096 K（激光功率为115 ~ 185 W）的沉积温度下，制备了具有楔帽状柱状晶粒的高度（100）取向CeO 2薄膜，其外延生长关系为CeO 2 [100]//LAO [100]（CeO 2 [010]//LAO [011]）。（200）面反射的ω-扫描和（220）面反射的ω-扫描的半峰全宽分别为0.8° ~ 1.8 °和0.7° ~ 1.2 °。获得纯（100）择优取向CeO 2薄膜的最高沉积速率为30 μm h-1。
CeO2films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO3single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)‐oriented CeO2films with wedge‐caped columnar grains were prepared, whose epitaxial growth relationship was CeO2[100]//LAO [100] (CeO2[010]//LAO [011]). Their full width at half maximum of the ω‐scan on the (200) reflection and that of the ϕ‐scan on the (220) reflection were 0.8°–1.8° and 0.7°–1.2°, respectively. The highest deposition rate at which CeO2film with pure (100) preferred orientation could be obtained was 30 μm h−1.