A New Transistor with Two‐Level Metal Electrodes
A New Transistor with Two‐Level Metal Electrodes
复制标题
一种新型两级金属电极晶体管
DOI:
10.1149/1.2133121
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发表时间:
1977
期刊:
影响因子:
--
通讯作者:
Takeshi Kimura
中科院分区:
文献类型:
--
作者:
A. Saiki;S. Harada;T. Okubo;K. Mukai;Takeshi Kimura
A new transistor with two-level metal electrodes is developed in order to allow for the automatic wire bonding process and at the same time to minimize the chip area. To meet these requirements, the second-level electrodes are formed right above the active area of a conventional transistor by utilizing the PMP (planar metallization with polymer) technology (1) with PIQ (polyimide iso-indroquinazolinedione) film as an insulating layer. PIQ is a thermally stable polyimide-type resin specially synthesized by us for the semiconductor devices. Through several types of reliability tests, it is shown that the new transistor exhibits excellent reliability in its device characteristics, indicating that the new structure satisfies the stringent reliability and productivity requirements for transistors molded in plastics.In discrete transistors, reliability and productivity requirements are very stringent. In order to satisfy these requirements, a new transistor with two-level metal electrodes has been developed. The second-level electrodes of this transistor were formed on the surface of a conventional transistor utilizing PMP technology (1, 2). The second-level electrodes were formed on the whole surface of transistor pellet so as to obtain a larger area for wire bonding than the first-level electrodes. Therefore, this electrode structure has improved the productivity of the wire bonding. This is one of the features of the new transistor. In this electrode structure, PIQ film is utilized as an insulating layer. PIQ is a polyimide-type resin specially synthesized by us for semiconductor devices. It has been shown that the PIQ film has the ability to protect the transistor surface. Therefore, the stability and reliability of transistors with PIQ as a protection film are excellent. This is another feature of this new transistor.