A New Transistor with Two‐Level Metal Electrodes

A New Transistor with Two‐Level Metal Electrodes
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一种新型两级金属电极晶体管

DOI:
10.1149/1.2133121
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发表时间:
1977
期刊:
影响因子:
--
通讯作者:
Takeshi Kimura
Takeshi Kimura
中科院分区:
--
文献类型:
--
作者:
A. Saiki;S. Harada;T. Okubo;K. Mukai;Takeshi Kimura

文献摘要

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为了实现自动引线键合工艺,同时减小芯片面积,开发了一种具有两级金属电极的新型晶体管。为了满足这些要求,第二级电极通过利用PMP(具有聚合物的平面金属化)技术(1)以PIQ(聚酰亚胺异吲哚喹唑啉二酮)膜作为绝缘层形成在常规晶体管的有源区的正上方。PIQ是我们专门为半导体器件合成的热稳定聚酰亚胺型树脂。通过几种可靠性测试,表明这种新型晶体管在器件特性方面具有优异的可靠性,表明这种新结构满足了塑料模制晶体管对可靠性和生产率的严格要求。为了满足这些要求,已经开发了具有两级金属电极的新晶体管。该晶体管的第二级电极利用PMP技术形成在常规晶体管的表面上(1,2)。第二级电极形成在晶体管片的整个表面上,以便获得比第一级电极更大的引线键合面积。因此,这种电极结构提高了引线键合的生产率。这是新晶体管的特点之一。在该电极结构中,PIQ膜被用作绝缘层。PIQ是我们专门为半导体器件合成的聚酰亚胺型树脂。结果表明,PIQ膜具有保护晶体管表面的能力。因此,具有PIQ作为保护膜的晶体管的稳定性和可靠性是优异的。这是这种新型晶体管的另一个特点。
A new transistor with two-level metal electrodes is developed in order to allow for the automatic wire bonding process and at the same time to minimize the chip area. To meet these requirements, the second-level electrodes are formed right above the active area of a conventional transistor by utilizing the PMP (planar metallization with polymer) technology (1) with PIQ (polyimide iso-indroquinazolinedione) film as an insulating layer. PIQ is a thermally stable polyimide-type resin specially synthesized by us for the semiconductor devices. Through several types of reliability tests, it is shown that the new transistor exhibits excellent reliability in its device characteristics, indicating that the new structure satisfies the stringent reliability and productivity requirements for transistors molded in plastics.In discrete transistors, reliability and productivity requirements are very stringent. In order to satisfy these requirements, a new transistor with two-level metal electrodes has been developed. The second-level electrodes of this transistor were formed on the surface of a conventional transistor utilizing PMP technology (1, 2). The second-level electrodes were formed on the whole surface of transistor pellet so as to obtain a larger area for wire bonding than the first-level electrodes. Therefore, this electrode structure has improved the productivity of the wire bonding. This is one of the features of the new transistor. In this electrode structure, PIQ film is utilized as an insulating layer. PIQ is a polyimide-type resin specially synthesized by us for semiconductor devices. It has been shown that the PIQ film has the ability to protect the transistor surface. Therefore, the stability and reliability of transistors with PIQ as a protection film are excellent. This is another feature of this new transistor.