Xenon Flash Lamp Annealing of Poly-Si Thin Films
Xenon Flash Lamp Annealing of Poly-Si Thin Films
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多晶硅薄膜的氙闪光灯退火
DOI：
10.1149/1.2200291
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发表时间：
2006
影响因子：
3.9
通讯作者：
T. Homma
中科院分区：
文献类型：
--
作者：
Fujio Terai;S. Matunaka;Tauchi Akihiko;Chikako Ichimura;T. Nagatomo;T. Homma
我们研究了氙气（Xe）闪光灯退火法在玻璃基板上制备非晶硅（a-Si）薄膜，用于多晶硅（poly-Si）薄膜晶体管。Xe闪光灯发出400 ~ 800 nm波长范围的白光，持续40 μs，从而瞬间提供a- si薄膜结晶为多晶硅薄膜所需的能量。灯内电极间距1000mm，通径10mm，峰值电压可达20kv。样品结构为a- si (50 nm)/SiOx (100 nm)，通过等离子体增强化学气相沉积，使用sih4气体沉积在玻璃衬底上。当光能密度为1.82 J/ cm2时，在不加热衬底的情况下，Xe闪光灯退火获得了500 nm的平均晶粒尺寸。在1.55 ~ 1.78 J/cm 2时晶粒尺寸小于50 nm，在1.82 J/cm 2时晶粒明显长大。光能被整个a- si薄膜吸收，因为Xe闪光灯发出的光波长范围很宽，在400-800 nm之间。因此，当光能超过观察到的a-Si膜熔点阈值时，a-Si膜可以部分熔化，随后在顶部和底部表面结晶，从而形成大晶粒多晶硅。
We have investigated xenon (Xe) flash lamp annealing for the crystallization of amorphous silicon (a-Si) films for polycrystalline silicon (poly-Si) thin film transistors on glass substrates. The Xe flash lamp emits white light with a wavelength range of 400-800 nm for 40 μs, thereby instantaneously supplying the energy necessary to crystallize a-Si films to poly-Si films. The distance between electrodes in the lamp is 1000 mm, the bore diameter is 10 mm, and the peak voltage is up to 20 kV. The sample structure is a-Si (50 nm)/SiOx (100 nm) deposited on a glass substrate by plasma-enhanced chemical vapor deposition using SiH 4 gas. An average grain size of 500 nm is obtained without substrate heating during Xe flash lamp annealing when the light energy density is 1.82 J/cm 2 . The grain size is less than 50 nm at 1.55-1.78 J/cm 2 , and a significant grain growth occurs at 1.82 J/cm 2 . The light energy is absorbed by the whole a-Si film, because the Xe flash lamp emits light with a wide wavelength range of 400-800 nm. Therefore, when the light energy exceeds its threshold at which the a-Si film melting point is observed, a-Si films can be partially melted and subsequently crystallized at the top and bottom surfaces, thereby forming large-grain poly-Si.