Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors
Equivalent distributed capacitance model of oxide traps on frequency dispersion of C-V curve for MOS capacitors
复制标题
MOS电容器C-V曲线频率分散的氧化物陷阱等效分布电容模型
DOI：
10.1088/1674-1056/25/11/118502
复制
发表时间：
2016
影响因子：
1.7
通讯作者：
Tang Wing-Man
中科院分区：
文献类型：
--
作者：
Lu Han-Han;Xu Jing-Ping;Liu Lu;Lai Pui-To;Tang Wing-Man
为了解释MOS电容C-V曲线在1 kHz ~ 1 MHz频率范围内的频散现象，建立了只考虑栅氧陷阱电容的等效分布电容模型。该模型是基于费米-狄拉克统计和充电/放电的影响，由一个小的交流信号引起的氧化物陷阱。仿真结果与实验数据吻合较好，验证了模型的有效性。模拟结果表明，MOS电容在积累和近平带时的电容色散主要是由氧化物/半导体界面附近的陷阱引起的，远离界面的陷阱对电容色散的影响可以忽略不计，并讨论了陷阱对栅电容的贡献距离.此外，通过排除氧化物陷阱电导的影响，该模型避免了虚数的使用和复杂的计算，因此简单直观。
An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C–V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi–Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive.