Annealing- free Si3N4 frequency combs for monolithic integration with Si photonics
Annealing- free Si3N4 frequency combs for monolithic integration with Si photonics
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DOI：
10.1063/1.5038795
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发表时间：
2018-08-20
影响因子：
4
通讯作者：
Sciancalepore, Corrado
中科院分区：
文献类型：
--
作者：
El Dirani, Houssein;Kamel, Ayman;Sciancalepore, Corrado
与晶体硅相比，氮化硅（SiNOI）具有较低的双光子吸收和自由载流子非线性损耗，是一种很有吸引力的光频梳产生平台。然而，到目前为止用于演示基于Si 3 N4的频率梳的高温退火使得与基于硅的光电子学的共集成变得难以捉摸，从而显著降低了其有效的互补金属氧化物半导体（CMOS）兼容性。我们在这里报告的制造和测试的无退火SiNOI非线性光子电路。特别是，我们已经开发出一种工艺，用于制造低损耗，无退火，无裂纹的Si 3 N4 740 nm厚的薄膜，用于基于克尔的非线性光子学，具有与前端硅光子学的全工艺兼容性。实验证据表明，使用这种无退火氮化硅薄膜的微谐振器能够通过基于四波混频的光学参量振荡产生跨越1300-2100 nm的频率梳。这项工作构成了时间稳定的高能效克尔宽带源的决定性一步，具有与CMOS线上的硅光子集成电路的全工艺兼容性。出版社：AIP Publishing
Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300-2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines. Published by AIP Publishing.