New contacting technique for thin film resistance measurements perpendicular to the film plane
New contacting technique for thin film resistance measurements perpendicular to the film plane
复制标题
用于垂直于薄膜平面的薄膜电阻测量的新型接触技术
DOI：
10.1063/1.109730
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
H. Janssen
中科院分区：
文献类型：
--
作者：
M. Gijs;J. Giesbers;S. Lenczowski;H. Janssen
使用显微光刻，我们已经制作了Au薄膜结构的电阻测量与电流方向垂直于膜平面。我们提出了一种新的接触几何形状，用于精确测量非常低的金属垂直电阻，这可以防止接触引线的大得多的电阻的任何干扰影响。我们的实验结果很好地解释了一个经典的模型和我们的解释是独立的基于有限元法的三维静电计算证实。
Using microlithography, we have fabricated Au thin film structures for resistance measurements with current directed perpendicular to the film plane. We propose a novel contact geometry for accurate measurement of the very low metallic perpendicular resistance, which prevents any disturbing influence from the much larger resistance of the contact leads. Our experimental results are well explained by a classical model and our interpretation is independently confirmed by a three‐dimensional electrostatic calculation based on the finite element method.