Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy
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分子束外延生长InGaAs/AlAs/AlAsSb耦合双量子阱的光学质量改善
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
H. Ishikawa
中科院分区：
文献类型：
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作者：
J. Kasai;T. Mozume;H. Yoshida;T. Simoyama;A. Gopal;H. Ishikawa
我们用分子束外延技术生长了带有AlAs扩散停止层的InGaAs/AlAs/AlAsSb耦合双量子威尔斯阱（C-DQW）。获得的样品具有许多交叉阴影线，表明相对较差的结构质量。然而，光学测量表明，C-DQW的光学质量大大提高相比，早期的C-DQW没有AlAs扩散停止层。在1.62 μm的光通信波长下，C-DQW样品的子带间吸收饱和强度非常低，为34 fJ/μm2，同时保持了约600 fs的超快响应时间。（© 2004 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have grown InGaAs/AlAs/AlAsSb coupled double quantum wells (C-DQWs) with AlAs diffusion-stopping layers by molecular beam epitaxy. An obtained sample had many cross-hatched lines, suggesting relatively poor structural quality. Optical measurements, however, revealed that the optical quality of the C-DQWs was greatly improved compared to earlier C-DQWs without AlAs diffusion-stopping layers. The intersubband absorption saturation intensity in the present C-DQW sample was extremely low, measuring 34 fJ/μm2 at the optical communication wavelength of 1.62 μm, while ultrafast response times of about 600 fs were maintained. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)