High performance ZnSTe photovoltaic visible-blind ultraviolet detectors
High performance ZnSTe photovoltaic visible-blind ultraviolet detectors
复制标题
高性能ZnSTe光伏可见盲紫外探测器
DOI：
10.1063/1.120522
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
G. Wong
中科院分区：
文献类型：
--
作者：
I. Sou;C. L. Man;Z. H. Ma;Z. Yang;G. Wong
ZnS1−xTex-based Schottky photodiodes have been fabricated on various substrates using the molecular beam epitaxy technique. The photovoltage output of these photovoltaic devices is determined using Fourier transform interferometric spectroscopy. The results show that these devices (with Te<10%) are highly sensitive in the ultraviolet but are visible blind. An external quantum efficiency of over 50% has been achieved on a device grown on a GaP substrate and over 40% on a Si substrate.
