Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering
Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering
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射频磁控管反应溅射在 LaNiO3 电极上结晶 Sr0.5Ba0.5Nb2O6 薄膜
DOI：
10.1143/jjap.39.545
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发表时间：
2000
影响因子：
1.5
通讯作者：
J. Gan
中科院分区：
文献类型：
--
作者：
C. Jong;J. Gan
采用射频磁控溅射系统在导电氧化物LNO(LaNiO_3)电极上制备了锶-钡-Nb_2O_6(Sr0.5Ba0.5Nb_2O_6)(SBN)薄膜。用700℃以上的快速热退火(RTA)5min来晶化SBN薄膜，而不是常规的炉退火。织构的SBN薄膜有两种取向：一种是(001)或(310)取向，另一种是(002)或(620)取向。用化学分析电子能谱(ESCA)定量分析方法测量的薄膜成分与靶材的化学计量比几乎相同。用二次离子质谱仪(SIMS)测量了SBN薄膜和靶材的深度分布。薄膜的浓度相当均匀。用RTA在800℃热处理5min后，La和Ni扩散到SBN薄膜中。计算了La在SBN薄膜中的扩散系数。
Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.