Developments of SOI monolithic pixel detectors
Developments of SOI monolithic pixel detectors
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DOI：
10.1016/j.nima.2010.02.190
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发表时间：
2010-11-01
影响因子：
1.4
通讯作者：
Ohtomo, A.
中科院分区：
文献类型：
--
作者：
Arai, Y.;Miyoshi, T.;Ohtomo, A.
采用 0.2 μm 绝缘体上硅 (SOI) CMOS 技术的单片像素探测器已经开发出来。它在单个芯片上同时具有厚的高电阻率传感器层和薄的LSI电路层。积分型和计数型像素探测器是用光和X射线制造和测试的。该过程通过 KEK 运营的多项目晶圆 (MPW) 运行向许多研究人员开放。通过使用掩埋 p 阱和 3D 集成技术，制造技术的进一步改进也在研究中。 (C) 2010 Elsevier B.V. 保留所有权利。
A monolithic pixel detector with 0.2 mu m silicon-on-insulator (SOI) CMOS technology has been developed. It has both a thick high-resistivity sensor layer and thin LSI circuit layer on a single chip. Integration-type and counting-type pixel detectors are fabricated and tested with light and X-rays. The process is open to many researchers through Multi Project Wafer (MPW) runs operated by KEK. Further improvements of the fabrication technologies are also under investigation by using a buried p-well and 3D integration technologies. (C) 2010 Elsevier B.V. All rights reserved.