High-speed single-electron memory: cell design and architecture

High-speed single-electron memory: cell design and architecture
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高速单电子存储器：单元设计和架构

DOI：
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发表时间：
1998
期刊：
Proceedings. Second International Workshop on Physics and Modeling of Devices Based on Low-Dimensional Structures (Cat. No. 98EX199)
影响因子：
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通讯作者：
H. Ahmed
H. Ahmed
中科院分区：
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文献类型：
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作者：
H. Mizuta;D. Williams;K. Katayama;H. Muller;K. Nakazato;H. Ahmed

文献摘要

被引文献

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提出了一种用于高速RAM的新型硅基单电子存储单元。通过进行蒙特卡洛单电子模拟，对新的体系结构和操作方案进行了评估。通过执行瞬变波形分析，展示了写入时间小于10毫微秒的高速写入操作。
A new silicon-based single-electron memory cell is presented for use as a high-speed RAM. Novel architecture and operation schemes are evaluated by conducting Monte Carlo single-electron simulations. By performing transient waveform analysis, a high-speed write operation is demonstrated with a write time shorter than 10 nsec.