Bulk electronic structure of optimally doped Ba ( Fe 1 - x Co x ) 2 As 2
Bulk electronic structure of optimally doped Ba ( Fe 1 - x Co x ) 2 As 2
复制标题
最佳掺杂Ba ( Fe 1 - x Co x ) 2 As 2 的体电子结构
DOI：
10.1103/physrevb.81.064509
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发表时间：
2010
影响因子：
3.7
通讯作者：
Utfeld C
中科院分区：
文献类型：
--
作者：
Utfeld C
我们报告高分辨率，散装康普顿散射测量揭开费米面的最佳掺杂铁砷化物超导体，。我们的测量结果与电子结构的第一性原理计算一致，揭示了中心电子口袋和中心空穴口袋。此外，我们的数据是一致的，这些表之一，已被预测在本地密度近似最小的位置通过电子结构计算的强三维性。非相互作用的磁化率的补充计算，，表明，由于带间费米面嵌套，并激发了这类材料的超导性的几个理论的发展，宽峰，生存在这个家庭中的费米面的测量三维。
We report high-resolution, bulk Compton scattering measurements unveiling the Fermi surface of an optimally doped iron-arsenide superconductor,. Our measurements are in agreement with first-principles calculations of the electronic structure, revealing both the-centered electron pockets and the-centered hole pockets. Moreover, our data are consistent with the strong three dimensionality of one of these sheets that has been predicted by electronic structure calculations at the local-density-approximation-minimum As position. Complementary calculations of the noninteracting susceptibility,, suggest that the broad peak that develops due to interband Fermi-surface nesting, and which has motivated several theories of superconductivity in this class of material, survives the measured three dimensionality of the Fermi surface in this family.