S-parameter characterization of mm-wave IMPATT oscillators
S-parameter characterization of mm-wave IMPATT oscillators
复制标题
毫米波 IMPATT 振荡器的 S 参数表征
DOI：
10.1109/smic.2005.1587948
复制
发表时间：
2006
期刊：
影响因子：
--
通讯作者：
E. Kasper
中科院分区：
文献类型：
--
作者：
J. Hasch;E. Kasper
采用完全单片集成技术设计振荡器需要精确表征有源元件以及周围的无源电路。基于对Impatt二极管S参数的测量，设计、制造和测量了频率高达124 GHz的毫米波振荡器。使用了两种测量设置，覆盖0.04 - 140 GHz的频率范围，并采用了仔细的校准方法
Designing oscillators in a fully monolithically integrated technology requires accurate characterization of the active element, as well as the surrounding passive circuitry. Based upon S parameter measurements of Impatt diodes, millimeter wave oscillators up to 124 GHz have been designed,manufactured and measured. Two measurements setups covering the frequency range from 0.04-140 GHz were used and a careful calibration approach was applied