Laser-induced terahertz emission in Co2MnSi/Pt structure
Laser-induced terahertz emission in Co2MnSi/Pt structure
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DOI：
10.35848/1882-0786/abb1c9
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发表时间：
2020-09
影响因子：
2.3
通讯作者：
Y. Sasaki;Y. Takahashi;S. Kasai
中科院分区：
文献类型：
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作者：
Y. Sasaki;Y. Takahashi;S. Kasai
在本研究中，研究了 Co2MnSi/Pt 结构中的太赫兹 (THz) 发射。退火后太赫兹发射强度增加，由于B2有序度增加，优化温度在400℃以上。 Co2MnSi/Pt的太赫兹发射强度是CoFe/Pt的1.4-2.0倍。 Co2MnSi/Pt 的太赫兹电导率小于 CoFe/Pt。两种材料的超快自旋电流强度几乎相同。小的电导率和相当的超快自旋电流注入 Pt 层可能是 Co2MnSi/Pt 中高效太赫兹发射的原因。
In this study, the terahertz (THz) emission in a Co2MnSi/Pt structure was investigated. The THz emission intensity increased after annealing, and the optimized temperature was above 400 °C owing to the increase in B2 ordering. The THz emission intensity of Co2MnSi/Pt was 1.4–2.0 times larger than that of CoFe/Pt. The THz conductivity for Co2MnSi/Pt was smaller than that for CoFe/Pt. The ultrafast spin-current intensity was almost the same in both materials. A small conductivity and comparable ultrafast spin-current injection into the Pt layer are possible reasons for the efficient THz emission in Co2MnSi/Pt.