Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics
Epitaxial and quasiepitaxial growth of halide perovskites: New routes to high end optoelectronics
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DOI：
10.1063/5.0017172
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发表时间：
2020-10
期刊：
影响因子：
6.1
通讯作者：
Lili Wang;Isaac King;Pei Chen;Matthew Bates;R. Lunt
中科院分区：
文献类型：
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作者：
Lili Wang;Isaac King;Pei Chen;Matthew Bates;R. Lunt
受金属卤化物钙钛矿在光伏应用中的令人兴奋的性质的启发，存在进一步探索这类材料在更广泛的领域和高端光电子学中的限制的不断发展的需要，这需要更好地控制膜结构、缺陷水平和质量。外延生长已普遍部署在半导体工业中。这提供了精确对齐原子排列的路线，以控制结构和应变，并实现最高水平的光电性能。本文从外延和准外延两个方面介绍了近年来金属卤化物钙钛矿材料的外延生长，并从生长方法到应用集成等方面综述了其最新进展。区分外延和准外延的主要标准，即，晶格匹配和排序可用于指导选择合适的衬底、生长方法和用于各种应用的前体。
Motivated by the exciting properties of metal halide perovskites in photovoltaic applications, there is an evolving need to further explore the limitations of this class of materials in broader fields and high end optoelectronics, which requires better control over the film structure, defect levels, and quality. Epitaxial growth has been ubiquitously deployed in the semiconducting industry. This affords routes to precisely align the atomic arrangement to control the structure and strain and achieve the highest levels of optoelectronic performance. In this review, the recent emergence and progress in the epitaxial growth of metal halide perovskites are introduced within the context of epitaxial and quasiepitaxial approaches, and recent advances are surveyed from growth methods to application integration. The main criteria distinguishing epitaxy and quasiepitaxy, i.e., lattice matching and ordering, can be deployed to direct the selection of proper substrates, growth methods, and precursors for various applications.