Influence of 4f electronic states on the surface states of rare-earth hexaborides
Influence of 4f electronic states on the surface states of rare-earth hexaborides
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4f电子态对稀土六硼化物表面态的影响
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
K. Maiti
中科院分区：
文献类型：
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作者：
S. Patil;Ganesh Adhikary;G. Balakrishnan;K. Maiti
我们使用最先进的高分辨率光电子能谱研究一系列稀土六硼化物的表面电子结构。实验结果显示所有六硼化物的表面态结合能约为 1.8 eV，表明其在此类化合物中的一般性质。每种化合物的费米能级 ϵF 附近的表面和体电子结构几乎相似。这表明了制造像 LaB6 这样具有低功函数的新材料的一种有趣的可能性，其中移动电子的行为可以通过稀土替代来调节。
We study the surface electronic structure of a series of rare-earth hexaborides using state-of-the-art high resolution photoemission spectroscopy. Experimental results reveal a surface state around 1.8 eV binding energy in all the hexaborides indicating its generic nature in this class of compounds. The surface and bulk electronic structures near the Fermi level, ϵF are almost similar in each of the compounds. This suggests an interesting possibility of fabricating new materials possessing low work function like LaB6 where the behavior of mobile electrons can be tuned by rare-earth substitutions.