Studies of accumulation rate of H atoms in solid H2 films exposed to 0.1 and 5.7 keV electrons
Studies of accumulation rate of H atoms in solid H2 films exposed to 0.1 and 5.7 keV electrons
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DOI:
10.1103/physrevb.107.134110
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发表时间:
2023-04
影响因子:
3.7
通讯作者:
S. Sheludiakov;C. Wetzel;D. M. Lee;V. Khmelenko;J. Järvinen;J. Ahokas;S. Vasiliev
中科院分区:
文献类型:
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作者:
S. Sheludiakov;C. Wetzel;D. M. Lee;V. Khmelenko;J. Järvinen;J. Ahokas;S. Vasiliev