OXIDATION BEHAVIOR OF SILICON CARBIDE
OXIDATION BEHAVIOR OF SILICON CARBIDE
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DOI：
10.1111/j.1151-2916.1958.tb12932.x
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发表时间：
1958-01-01
影响因子：
3.9
通讯作者：
ERVIN, G
中科院分区：
文献类型：
--
作者：
ERVIN, G
通过增重测量和表面反应产物的观察（包括氧化物表面膜厚度的光学测量）研究了纯化的绿色碳化硅在受控气氛中的氧化。与流体硅酸盐玻璃接触的碳化硅的氧化速率比单独的碳化硅大得多。在0.1毫米的真空中，由于挥发性SiO2的形成，氧化伴随着重量损失，并且以比在大气压下更大的速率进行。据推测，碳化硅正常氧化的速率控制过程是在表面上形成固体SiO2。
The oxidation of purified green silicon carbide in controlled atmospheres was studied by weight‐gain measurement and by observation of the surface reaction products, including optical measurement of the thickness of the oxide surface film. The rate of oxidation was much greater for silicon carbide in contact with fluid silicate glasses than for silicon carbide alone. In a vacuum of 0.1 mm., oxidation proceeded with loss of weight, because of the formation of volatile SiO2, and at a greater rate than at atmospheric pressure. It is postulated that the rate‐controlling process in the normal oxidation of silicon carbide is the formation of solid SiO2on the surface.