Drain induced barrier increasing in multilayer ReS2
Drain induced barrier increasing in multilayer ReS2
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DOI：
10.1088/2053-1583/ab868f
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发表时间：
2020-05
期刊：
影响因子：
5.5
通讯作者：
S. Kim;Da-Woom Jeong;Hyebin Lee;Inyeob Na;S. Kim;Doyoon Kim;S. Lim;Byung Chul Lee;Seungwon Lee;Sang Mo Yang;Gyu‐Tae Kim;Min-Kyu Joo
中科院分区：
文献类型：
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作者：
S. Kim;Da-Woom Jeong;Hyebin Lee;Inyeob Na;S. Kim;Doyoon Kim;S. Lim;Byung Chul Lee;Seungwon Lee;Sang Mo Yang;Gyu‐Tae Kim;Min-Kyu Joo
层间隧穿电阻率（Rint）和层间费米电荷屏蔽效应在二维（2D）多层器件的载流子输运中起着关键作用。例如，垂直电场改变Rint，导致沟道沿着c轴迁移。然而，由于Rint除了垂直场之外还随漏极电场而显著变化，因此每层对总电流的有效贡献随漏极偏压（VD）而变化。在这里，我们证明了一个漏诱导势垒增加（DIBI）在2D多层硫化铼（ReS2）作为一种可能的反向短沟道效应（rSCE）。与其他二维材料相比，ReS2的去耦层相互作用和更高的层间电阻率使我们能够清楚地观察到DIBI。随着VD的增加，Rint的有效幅度急剧下降，导致（i）截止电流的增加，（ii）场效应迁移率的增强，以及（iii）平带电压（VFB）的蓝移，这与先前关于具有漏极诱导势垒降低（DIBL）的短沟道体硅器件的报道形成鲜明对比。我们将这种差异归因于当沟道从底部迁移到ReS2的顶部表面时，费米能级（EF）的可调性减弱，以及VD导致的相反静电力，这意味着VD依赖的Rint在2D多层系统的载流子传输机制中的重要性增加。通过低频（LF）噪声分析探测的VD相关库仑散射参数为通道偏移提供了更深入的见解。我们的研究结果为理解和利用二维多层膜系统中的基本电荷传输机制铺平了道路。
The interlayer tunneling resistivity (Rint) and Thomas-Fermi charge screening effects play critical roles in the carrier transport of two-dimensional (2D) multilayer devices. For example, the vertical electric field modifies the Rint, resulting in a channel migration along the c-axis. However, because Rint varies considerably with the drain electric field in addition to the vertical field, the effective contribution of each layer to the total current varies with the drain bias (VD). Here, we demonstrate a drain induced barrier increasing (DIBI) in 2D multilayer rhenium disulfide (ReS2) as a possible reverse short channel effect (rSCE). The reported decoupled layer interaction and much higher interlayer resistivity of ReS2 compared to other 2D materials allow us to observe the DIBI clearly. As VD increases, the effective amplitude of Rint decreases dramatically, leading to (i) the increase of off-current, (ii) the enhancement of field-effect mobility, and (iii) the blue shift of the flat band voltage (VFB), which is in sharp contrast to a previous report on a short-channel bulk-Si device with drain induced barrier lowering (DIBL). We attribute this difference to the weakened Fermi level (EF) tunability when the channel migrates from the bottom to the top surface of ReS2, and to an opposite electrostatic force resulting from VD, implying the increased importance of VD-dependent Rint in the carrier transport mechanism of 2D multilayer systems. The VD-dependent Coulomb scattering parameter probed via a low frequency (LF) noise analysis provides deeper insights for the channel shift. Our findings pave the way for understanding and exploiting the fundamental charge transport mechanism in 2D multilayer systems.