Electronic structures of graphene layers on a metal foil: The effect of atomic-scale defects
Electronic structures of graphene layers on a metal foil: The effect of atomic-scale defects
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DOI：
10.1063/1.4824206
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发表时间：
2013-02
影响因子：
4
通讯作者：
Hui Yan;Cheng-Cheng Liu-Cheng;Ke-ke Bai;Xuejiao Wang;Mengxi Liu;Wei Yan;L. Meng;Yanfeng Zhang;
中科院分区：
文献类型：
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作者：
Hui Yan;Cheng-Cheng Liu-Cheng;Ke-ke Bai;Xuejiao Wang;Mengxi Liu;Wei Yan;L. Meng;Yanfeng Zhang;
在这里，我们报告了一种简便的方法，在金属箔上的石墨烯中产生高密度的原子级缺陷，并显示这些缺陷如何影响石墨烯层的电子结构。我们的扫描隧道显微镜测量，辅以第一性原理计算，揭示了原子尺度的缺陷导致石墨烯的谷间和谷内散射。由于散射的增强，缺陷附近区域的费米速度降低。
Here, we report a facile method to generate a high density of atomic-scale defects in graphene on metal foil and show how these defects affect the electronic structures of graphene layers. Our scanning tunneling microscope measurements, complemented by first-principles calculations, reveal that the atomic-scale defects result in both the intervalley and intravalley scattering of graphene. The Fermi velocity is reduced in the vicinity area of the defect due to the enhanced scattering.