Preparation of gallium oxynitride powder and its nanofibers by the nitridation of a gallium oxide precursor doped with nickel or cobalt obtained via the citrate route.
Preparation of gallium oxynitride powder and its nanofibers by the nitridation of a gallium oxide precursor doped with nickel or cobalt obtained via the citrate route.
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DOI：
10.1039/b919837g
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发表时间：
2010-06
影响因子：
4
通讯作者：
A. Miyaake;Y. Masubuchi;T. Takeda;T. Motohashi;S. Kikkawa
中科院分区：
文献类型：
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作者：
A. Miyaake;Y. Masubuchi;T. Takeda;T. Motohashi;S. Kikkawa
在含镍或钴含量低于5%的无定形氧化镓前体经柠檬酸盐途径氨氮化制备的氮化镓粉末中生长出针状晶体。这些晶体有几十纳米宽，几微米长，在750到850摄氏度的温度范围内，在少于200毫升/分钟（-1）的氨流中生长。氧化氮化镓的晶体结构为高度无序的2H纤锌矿型，并伴有一些3C混锌型层错。在少量Ni或Co和少量残余碳的供应方法下，晶体在基面上生长，改变了晶体的纵横比。通过Ni或Co的催化行为生长出针状晶体，以增强六方c平面上的一维生长。
Acicular crystals were grown in gallium oxynitride powder prepared by ammonia nitridation of amorphous gallium oxide precursors containing less than 5 at% of either Ni or Co, via the citrate route. The crystals were several tens of nanometres wide, several micrometres long, and grown in the temperature range 750 to 850 degrees C in a flow of ammonia of less than 200 mL min(-1). The crystal structure of the gallium oxynitride was a highly disordered 2H wurtzite-type with some 3C zinc blende-type stacking faults. The crystals grew in their basal plane changing their aspect ratio with the supplying method of small amounts of Ni or Co and an amount of residual carbon. The acicular crystals were grown by the catalytic behavior of Ni or Co to enhance one-dimensional growth in the hexagonal c-plane.