High-Vacuum Chemical Vapor Deposition of Monolayer Hexagonal Boron Nitride on Ge(001) from Borazine
High-Vacuum Chemical Vapor Deposition of Monolayer Hexagonal Boron Nitride on Ge(001) from Borazine
复制标题
环硼嗪Ge(001)上高真空化学气相沉积单层六方氮化硼
DOI：
10.1149/11102.0097ecst
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Arnold, Michael Scott
中科院分区：
文献类型：
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作者：
Su, Katherine Anna;Li, Songying;Arnold, Michael Scott
六方氮化硼（h-BN）具有独特的光电性能，是一种很有前途的新一代电子材料。虽然在金属基底上合成h-BN已经被广泛研究，但在CMOS兼容基底如Ge上合成h-BN还没有。在这里，我们报告了通过高真空化学气相沉积从环硼氮烷在Ge（001）上生长h-BN。我们发现在高真空下锗的升华抑制了h-BN的生长。为了克服这一挑战，我们将两个Ge衬底面对面放置，并实现了定向h-BN岛和单层h-BN膜的生长。
Hexagonal boron nitride (h-BN) is a promising material for nextgeneration electronics due to its unique optoelectronic and electronic properties. While the synthesis of h-BN on metallic substrates has been studied extensively, h-BN synthesis on CMOS-compatible substrates like Ge has not. Here, we report the growth of h-BN on Ge (001) from borazine via high-vacuum chemical vapor deposition. We find that the sublimation of Ge under high vacuum inhibits h-BN growth. To overcome this challenge, we place two Ge substrates face-to-face and achieve the growth of aligned h-BN islands and monolayer h-BN films.