Growth of single-crystalline AlZnO nanorods by simple vapor deposition method
Growth of single-crystalline AlZnO nanorods by simple vapor deposition method
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DOI：
10.1016/j.matlet.2006.11.124
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发表时间：
2007-07
影响因子：
3
通讯作者：
R. Deng;Y. Zou;Zhengwang Chen;G. Jiang;Honggao Tang
中科院分区：
文献类型：
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作者：
R. Deng;Y. Zou;Zhengwang Chen;G. Jiang;Honggao Tang
采用简单的气相沉积方法，在不同温度下，分别用不同的源在硅衬底上制备了具有不同Al浓度和不同直径的AlZnO纳米棒阵列。采用场发射扫描电子显微镜（FESEM）和透射电子显微镜（TEM）对样品的形貌和微观结构进行了表征。X射线荧光分析表明，Al/（Al+Zn）原子比分别约为3%和1.6%。观察到Al掺杂引起的强紫外发射的Burstein-Moss（BM）位移。
Well-aligned AlZnO nanorod arrays with various Al concentrations and various diameters were prepared on silicon substrate by a simple vapor deposition with separate sources at different temperatures. Field emission scanning electron microscope (FESEM) and transmission electron microscopy (TEM) were carried out to characterize morphology and microstructure. X-ray fluorescence shows that the atomic ratio of Al/(Al+Zn) of the arrays is determined to be about 3% and 1.6%, respectively. The Burstein–Moss (BM) shift of the strong ultraviolet emission is observed due to Al incorporation.