Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
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DOI：
10.1103/physrevlett.111.157205
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发表时间：
2013-10-11
影响因子：
8.6
通讯作者：
Schaefer, J.
中科院分区：
文献类型：
--
作者：
Barfuss, A.;Dudy, L.;Schaefer, J.
我们报告的拓扑相应变α-Sn的InSb的外延制造和电子性质。拓扑表面状态的形式在一个不寻常的带阶的存在下，而不是基于直接的自旋-轨道耦合，如密度泛函和GW板层计算所示。角分辨光电子能谱包括自旋探测实验探测拓扑自旋极化态如何从第二体价带出现。此外，我们证明了精确的控制费米能级的掺杂剂。
We report on the epitaxial fabrication and electronic properties of a topological phase in strained alpha-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.