Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability
Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability
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DOI：
10.1109/led.2008.2001030
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发表时间：
2008-07
影响因子：
4.9
通讯作者：
C. Millar;D. Reid;G. Roy;Scott Roy;A. Asenov
中科院分区：
文献类型：
--
作者：
C. Millar;D. Reid;G. Roy;Scott Roy;A. Asenov
We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET in the presence of random discrete dopants. A ground-breaking sample of 100 000 transistors with statistically unique random dopant distributions were simulated using the Glasgow 3-D device simulator and advanced grid computing technologies. The results indicate that the threshold voltage distribution deviates substantially from a Gaussian distribution, which may have significant implications for the margins used in circuit design, particularly in SRAM cells.
